FlexAL II: Atomic Layer Deposition (ALD): Difference between revisions
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|InstrumentName = Atomic Layer Deposition (ALD) | |InstrumentName = Atomic Layer Deposition (ALD) | ||
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|ImageOne = FlexAL-II-ALD.jpg | |ImageOne = FlexAL-II-ALD.jpg | ||
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== Description == | == Description == | ||
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to | The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides. | ||
===== Applications ===== | ===== Applications ===== | ||
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* Hafnium oxide deposition | * Hafnium oxide deposition | ||
* Niobium oxide and nitride deposition | * Niobium oxide and nitride deposition | ||
* | * Deposition of other films can be made available upon request | ||
===== Allowed material in ALD System ===== | ===== Allowed material in ALD System ===== | ||
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI | * Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI | ||
* | * Hard masks compatible with process temperature | ||
===== ALD Gas List ===== | ===== ALD Gas List ===== | ||
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== Specifications == | == Specifications == | ||
===== System Features ===== | ===== System Features ===== | ||
* FlexAL ALD Process Module | * FlexAL ALD Process Module | ||
* The chamber is electrically heated to 150 deg C | * The chamber is electrically heated to 150 °C | ||
* Two ports at 70 | * Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA | ||
* Precursor Multi-Bubbler Cabinet 6 Way | * Precursor Multi-Bubbler Cabinet 6 Way | ||
* Standard Gas Pod externally mounted (8 lines max) | * Standard Gas Pod externally mounted (8 lines max) | ||
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* Load Lock dry pump kit | * Load Lock dry pump kit | ||
* PC & 19" monitor | * PC & 19" monitor | ||
===== System Specifications ===== | ===== System Specifications ===== | ||
* ICP 65 plasma source with | * ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU | ||
* ALD | * ALD 600 °C biasable Inconel electrode | ||
* Heated 250 mTorr high resolution temperature compensated capacitance manometer | * Heated 250 mTorr high resolution temperature compensated capacitance manometer | ||
* ALD 100 mm pumping pipework plus 100 mm fast APC | * ALD 100 mm pumping pipework plus 100 mm fast APC | ||
* Process Acceptance criteria for thermal and plasma Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> | * Process Acceptance criteria for thermal and plasma Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> | ||
Revision as of 20:30, 27 May 2019
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Description
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.
Applications
- Aluminum oxide and nitride deposition
- Silicon dioxide and nitride deposition
- Titanium oxide and nitride deposition
- Hafnium oxide deposition
- Niobium oxide and nitride deposition
- Deposition of other films can be made available upon request
Allowed material in ALD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
ALD Gas List
- SF6
- N2
- O2
- O3
- NH3
- H2
- Ar
ALD Precursor List
- TMA (aluminum)
- TDMAT (titanium)
- BTBAS (silicon)
- TDMAH (hafnium)
- TBTDEN (niobium)
- Others upon request
Resources
SOPs & Troubleshooting
Process Documents
- Oxford Instruments ALD Materials Example Guide
- Oxford Instruments ALD gases and precursors
- Oxford Instruments ALD Process Acceptance report
- Oxford Instruments ALD Process Information guidance
Manufacturer Manuals
- Oxford FlexAL ALD System manual
- Adixen 4 Series Multistage Roots dry pumps brochure
- NovaSafe exhaust abatement system manual
- Oxford Ozone Delivery module manual
- Oxford FlexAl system drawings
Specifications
System Features
- FlexAL ALD Process Module
- The chamber is electrically heated to 150 °C
- Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
- Precursor Multi-Bubbler Cabinet 6 Way
- Standard Gas Pod externally mounted (8 lines max)
- 4 each Standard gasline and MFC for non-toxic gases
- 3 each By-passed gasline and MFC for toxic gases
- Ozone delivery system for ALD with up to 22% w/w ozone concentration
- Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
- Chamber process pump Pfeiffer/Adixen A604H kit
- FlexAL compact single wafer load lock kit
- Load Lock dry pump kit
- PC & 19" monitor
System Specifications
- ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
- ALD 600 °C biasable Inconel electrode
- Heated 250 mTorr high resolution temperature compensated capacitance manometer
- ALD 100 mm pumping pipework plus 100 mm fast APC
- Process Acceptance criteria for thermal and plasma Al2O3 and TiO2