EBPG 5000+: 100 kV Electron Beam Lithography: Difference between revisions

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* Aligned (AKA direct-write) electron beam lithography  
* Aligned (AKA direct-write) electron beam lithography  


===== Scientific / technical Applications =====
===== Scientific / Technical Applications =====
* Nanophotonics
* Nanophotonics
* Nano-optics
* Nano-optics

Revision as of 00:49, 20 May 2019

EBPG 5000+
Instrument Type Lithography
Techniques Electron Beam Lithography
Staff Manager Guy A. DeRose, PhD
Staff Email derose@caltech.edu
Staff Phone 626-395-3423
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B233C Steele
Lab Phone 626-395-1531 /1540
Manufacturer Raith Lithography BV
Model {{{Model}}}

Description

The Raith EBPG 5000+ is a dedicated direct-write Electron Beam Pattern Generator that is used to pattern large areas by high resolution electron beam lithography. This instrument has substrate holders to handle 2, 4, and 6" wafers, piece parts from a couple of mm to 6" diameter, and 3" and 5" mask plates. While this instrument can be set to operate at 20, 50, or 100 keV, it is normally set for 100 keV operation.

Opertional Applications
  • Non-aligned electron beam lithography
  • Aligned (AKA direct-write) electron beam lithography
Scientific / Technical Applications
  • Nanophotonics
  • Nano-optics
  • Waveguides

Resources

SOPs & Troubleshooting
Sample Prep and Writing SOPs
Troubleshooting SOPs
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals

Specifications

Manufacturer Specifications
Specifications
  • Voltage Range: 20, 50 or 100 kV
  • Current Range: 50 pA - >200 nA
  • Main Field size: Up to 1mm x 1mm
  • Main Field resolution: 20 bit
  • Maximum writing frequency: 100 MHz
  • Aperture Sizes: 200um, 300um, 400um
  • etc.