III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE: Difference between revisions

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* Atomic layer etch
* Atomic layer etch
===== Allowed Material in Etcher =====
===== Allowed Material in Etcher =====
* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, GaN, Nb, LiNbO<sub>3</sub>, YVO<sub>4</sub>, MgB<sub>2</sub>
* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, GaN, Nb, Ta, LiNbO<sub>3</sub>, YVO<sub>4</sub>, MgB<sub>2</sub>, BaTiO<sub>3</sub>
* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>, Cr hard masks
* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>, Cr hard masks
* Other: Metal in etch stack (not exposed to plasma)
* Other: Metal in etch stack (not exposed to plasma)
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== Resources ==
== Resources ==
===== SOPs & Troubleshooting =====
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* General Use SOP
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* Etcher toxic gas handling SOP
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* Power Up Oxford ICP-RIE SOP
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]


===== Process Documents =====
===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
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* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]


===== Review Articles =====
===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]


===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
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===== System Features =====
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system  
* PTiQ operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode  
* 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Twelve line gas pod with four non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV  turbo pump
* Adixen ATH1600MT turbo pump backed by Pfeiffer A124H ELT dry pump
* Single-wafer automatic insertion load lock with soft pump option
* Single-wafer automatic insertion load lock with wafer presence sensor
* Verity SD1024GH variable wavelength optical endpoint detection kit


===== System Specifications =====
===== System Specifications =====
* Chamber wall heating 80 &deg;C
* Chamber wall heating 50 &deg;C
* Cryo table range -140 to 400 &deg;C
* Cryo table range -150 to 400 &deg;C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* ICP 300 mm remote high-density plasma source with 3 kW RF generator and automatic matching unit
* Substrate bias control by 30 / 300 W RIE source
* Substrate bias control by 600 W RIE source with low power bias kit to allow accurate control <30 W
* Helium back-side wafer cooling
* ALE gas dose kit enabling controlled, reproducible gas doses down to 10ms
* Helium back-side wafer cooling and mechanical wafer clamping




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* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* Oxford III-V ICP-RIE
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Latest revision as of 17:28, 12 October 2026

Cobra III-V Etcher with ALE
Instrument Type Etching
Techniques III-V Semiconductor Etching
Atomic Layer Etching
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model PlasmaPro 100 Cobra

Description

The Cobra inductively-coupled plasma reactive-ion etcher (ICP-RIE) with ALE is an Oxford Instruments Plasma Technology PlasmaPro 100 Cobra 300 system that is optimized for the etching of compound semiconductors and also features an ALE gas dose kit. In addition to a wide range of gases for etching a variety of III-V materials, this system is also configured with an atomic layer etching gas dose kit enabling controlled pulses of gas doses down to 10ms over a table temperature range of -150 to 400 °C. The system is also available for etching of more novel optical materials such as lithium niobate. This system supports wafer sizes up to 6 inches.

Applications
  • III-V material etch
  • Lithium niobate etch
  • Atomic layer etch
Allowed Material in Etcher
  • Etch materials: Si, SixNy, SiO2, Ge, InP, GaAs, GaN, Nb, Ta, LiNbO3, YVO4, MgB2, BaTiO3
  • Masks: PMMA/ZEP/SPR/AZ/maN resists, SiO2/Al2O3, Cr hard masks
  • Other: Metal in etch stack (not exposed to plasma)
Etching Gas List
  • SF6
  • O2
  • Ar
  • Cl2
  • BCl3
  • CH4
  • H2
  • HBr
  • SiCl4

Resources

SOPs & Troubleshooting
Process Documents
Review Articles
Manufacturer Manuals

Specifications

Manufacturer Specifications
System Features
  • Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
  • PTiQ operating system
  • ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
  • 240 mm Cryo RIE electrode
  • 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
  • 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
  • Twelve line gas pod with four non-toxic and six toxic digital mass-flow-controlled gas lines
  • Adixen ATH1600MT turbo pump backed by Pfeiffer A124H ELT dry pump
  • Single-wafer automatic insertion load lock with wafer presence sensor
  • Verity SD1024GH variable wavelength optical endpoint detection kit
System Specifications
  • Chamber wall heating 50 °C
  • Cryo table range -150 to 400 °C
  • ICP 300 mm remote high-density plasma source with 3 kW RF generator and automatic matching unit
  • Substrate bias control by 600 W RIE source with low power bias kit to allow accurate control <30 W
  • ALE gas dose kit enabling controlled, reproducible gas doses down to 10ms
  • Helium back-side wafer cooling and mechanical wafer clamping


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