Rapid Thermal Processor: Difference between revisions
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# | {{InstrumentInfoboxOneImage| | ||
|InstrumentName = Solaris Rapid Thermal Processor | |||
|HeaderColor = #F5A81C | |||
|ImageOne = RTP.jpeg | |||
|ImageTwo = | |||
|InstrumentType = [[Equipment_List#Metrology|Metrology]] | |||
|RoomLocation = B235 Steele | |||
|LabPhone = 626-395-1539 | |||
|PrimaryStaff = [[Alireza Ghaffari]] | |||
|StaffEmail = alireza@caltech.edu | |||
|StaffPhone = 626-395-3984 | |||
|Manufacturer = Surface science integration | |||
|Model = Solaris 150 | |||
|Techniques = Rapid Thermal Processing | |||
|RequestTraining = alireza@caltech.edu | |||
|EmailList = kni-metrology | |||
|EmailListName = Metrology | |||
}} | |||
== Description == | |||
The Solaris 150 is a manual loading Rapid Thermal Processor system that can process up to 6 inch substrates. The system is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying. | |||
===== Applications ===== | |||
*Temperature range from room temperature to 1200 degrees C. | |||
* Processing gasses available: | |||
**Nitrogen | |||
**Argon | |||
**Forming Gas (5% H2 in N2) | |||
== Resources == | |||
===== SOPs ===== | |||
*[https://caltech.box.com/s/9less1mp9tg7xya8ugycnw11dhw0lnjf Solaris 150 – Rapid Thermal Processor -Short SOP] | |||
*[https://caltech.box.com/s/7uozrq6pmgkcr6l8u3qhnka9sgtgf3u9 Solaris 150 – Rapid Thermal Processor -Long SOP] | |||
===== Manuals ===== | |||
*[https://caltech.app.box.com/file/1237887943601 Solaris 150 - Rapid Thermal Processor Manual] | |||
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== Related Instrumentation in the KNI == | |||
===== Scanning Probe Microscopes ===== | |||
* [[Dimension Icon: Atomic Force Microscope (AFM) | Dimension Icon: Atomic Force Microscope (AFM)]] | |||
* [[Dektak 3ST: Profilometer | Dektak 3ST: Profilometer]] | |||
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Latest revision as of 23:51, 23 August 2024
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Description
The Solaris 150 is a manual loading Rapid Thermal Processor system that can process up to 6 inch substrates. The system is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.
Applications
- Temperature range from room temperature to 1200 degrees C.
- Processing gasses available:
- Nitrogen
- Argon
- Forming Gas (5% H2 in N2)
Resources
SOPs
Manuals