XeF2 Etcher for Silicon: Difference between revisions
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|RoomLocation = B235C Steele | |RoomLocation = B235C Steele | ||
|LabPhone = 626-395-1539 | |LabPhone = 626-395-1539 | ||
|PrimaryStaff = [[ | |PrimaryStaff = [[Kelly McKenzie]] | ||
|StaffEmail = | |StaffEmail = kmmckenz@caltech.edu | ||
|StaffPhone = 626-395- | |StaffPhone = 626-395-5732 | ||
|Manufacturer = N/A | |Manufacturer = N/A | ||
|Model = N/A | |Model = N/A | ||
|Techniques = Selective dry Si etching | |Techniques = Selective dry Si etching | ||
|RequestTraining = | |RequestTraining = kmmckenz@caltech.edu | ||
|EmailList = kni-XeF2 | |EmailList = kni-XeF2 | ||
|EmailListName = XeF<sub>2</sub> | |EmailListName = XeF<sub>2</sub> | ||
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== Resources == | == Resources == | ||
===== SOPs ===== | ===== SOPs ===== | ||
* [https://caltech.box.com/s/2zf5dwmdjyjxptvoscxkxe6yt57vr85v KNI SOP] | * [https://caltech.box.com/s/2zf5dwmdjyjxptvoscxkxe6yt57vr85v KNI SOP] | ||
Latest revision as of 19:17, 29 June 2024
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Description
The XeF2 etcher flows pressure- and time-controlled pulses of XeF2 gas into a chamber to deliver an isotropic etch that is highly selective only to silicon. It is commonly used to remove Si under layers that are accessed through vias, in order to suspend membranes and other structures in MEMS devices.
Applications
- Very high selectivity dry Si etching
- MEMS fabrication