XeF2 Etcher for Silicon: Difference between revisions
Jump to navigation
Jump to search
mNo edit summary |
No edit summary |
||
| (7 intermediate revisions by 4 users not shown) | |||
| Line 1: | Line 1: | ||
{{InstrumentInfoboxOneImage| | {{InstrumentInfoboxOneImage| | ||
|InstrumentName = XeF<sub>2</sub> Silicon Etcher | |InstrumentName = XeF<sub>2</sub> Silicon Etcher | ||
|HeaderColor = # | |HeaderColor = #FFE2B9 | ||
|ImageOne = XeF2-Etcher.jpg | |ImageOne = XeF2-Etcher.jpg | ||
|ImageTwo = | |ImageTwo = | ||
|InstrumentType = [[Equipment_List#Etching|Etching]] | |InstrumentType = [[Equipment_List#Etching|Etching]] | ||
|RoomLocation = | |RoomLocation = B235C Steele | ||
|LabPhone = 626-395-1539 | |LabPhone = 626-395-1539 | ||
|PrimaryStaff = [[ | |PrimaryStaff = [[Kelly McKenzie]] | ||
|StaffEmail = | |StaffEmail = kmmckenz@caltech.edu | ||
|StaffPhone = 626-395- | |StaffPhone = 626-395-5732 | ||
|Manufacturer = N/A | |Manufacturer = N/A | ||
|Model = N/A | |Model = N/A | ||
|Techniques = Selective dry Si etching | |Techniques = Selective dry Si etching | ||
|RequestTraining = | |RequestTraining = kmmckenz@caltech.edu | ||
|EmailList = kni-XeF2 | |EmailList = kni-XeF2 | ||
|EmailListName = XeF<sub>2</sub> | |EmailListName = XeF<sub>2</sub> | ||
}} | }} | ||
== Description == | == Description == | ||
The XeF<sub>2</sub> etcher flows pressure and time controlled pulses of XeF<sub>2</sub> gas into a chamber to deliver an isotropic etch | The XeF<sub>2</sub> etcher flows pressure- and time-controlled pulses of XeF<sub>2</sub> gas into a chamber to deliver an isotropic etch that is highly selective only to silicon. It is commonly used to remove Si under layers that are accessed through vias, in order to suspend membranes and other structures in MEMS devices. | ||
===== Applications ===== | ===== Applications ===== | ||
Latest revision as of 19:17, 29 June 2024
|
Description
The XeF2 etcher flows pressure- and time-controlled pulses of XeF2 gas into a chamber to deliver an isotropic etch that is highly selective only to silicon. It is commonly used to remove Si under layers that are accessed through vias, in order to suspend membranes and other structures in MEMS devices.
Applications
- Very high selectivity dry Si etching
- MEMS fabrication