Tube Furnaces for Wet & Dry Processing: Difference between revisions
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|RoomLocation = B235 Steele | |RoomLocation = B235 Steele | ||
|LabPhone = 626-395-1532 | |LabPhone = 626-395-1532 | ||
|PrimaryStaff = [[ | |PrimaryStaff = [[Kelly McKenzie]] | ||
|StaffEmail = | |StaffEmail = kmmckenz@caltech.edu | ||
|StaffPhone = 626-395- | |StaffPhone = 626-395-5732 | ||
|Manufacturer = Tystar Corporation | |Manufacturer = Tystar Corporation | ||
|Model = Tytan Horizontal<br>Diffusion Furnace | |Model = Tytan Horizontal<br>Diffusion Furnace | ||
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== Description == | == Description == | ||
The system is designed for processing up to one-hundred, 150 mm (6") wafers per tube. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing. | The system is designed for processing up to one-hundred, 150 mm (6") silicon or sapphire wafers per tube and can accommodate smaller sample sizes also. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing. | ||
===== Applications ===== | ===== Applications ===== | ||
* Dry & Wet oxidation | * Dry & Wet oxidation | ||
* Annealing | * Annealing | ||
===== Allowed Materials ===== | |||
* Silicon, SiNx, or sapphire that is completely free of metal or organic contamination | |||
** Recommended to have undergone a standard RCA clean or similar beforehand | |||
* No other sample material allowed | |||
* No metal or organic contamination | |||
** Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination | |||
===== Gas List ===== | |||
* Nitrogen | |||
* Oxygen | |||
* Water Vapor (Tube 1) | |||
== Resources == | == Resources == | ||
===== Tystar Oxidation Recipe ===== | |||
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation 1000C ] | |||
===== SOPs & Troubleshooting ===== | ===== SOPs & Troubleshooting ===== | ||
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ] | * [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ] | ||
Latest revision as of 22:59, 15 April 2024
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Description
The system is designed for processing up to one-hundred, 150 mm (6") silicon or sapphire wafers per tube and can accommodate smaller sample sizes also. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
Applications
- Dry & Wet oxidation
- Annealing
Allowed Materials
- Silicon, SiNx, or sapphire that is completely free of metal or organic contamination
- Recommended to have undergone a standard RCA clean or similar beforehand
- No other sample material allowed
- No metal or organic contamination
- Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination
Gas List
- Nitrogen
- Oxygen
- Water Vapor (Tube 1)