FlexAL II: Atomic Layer Deposition (ALD): Difference between revisions

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|RoomLocation = B235 Steele
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = nathslee@caltech.edu
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Manufacturer = Oxford Instruments
|Techniques = Atomic Layer Deposition of <br>Oxides and Nitrides
|Techniques = Atomic Layer Deposition of <br>Oxides and Nitrides
|EmailList =  kni-oxfordpecvd
|EmailList =  kni-ald
|EmailListName = Oxford PECVD
|EmailListName = Oxford FlexAl ALD
|Model = FlexAL II
|Model = FlexAL II
}}
}}
== Description ==
== Description ==
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.
 
Some film examples by KNI lab members include thermally-grown conductive TiO<sub>2</sub> as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.


===== Applications =====
===== Applications =====
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* Hard masks compatible with process temperature
* Hard masks compatible with process temperature


===== ALD Gas List =====
===== ALD Gas List (links to SDS) =====
* SF<sub>6</sub>
* [https://caltech.box.com/s/4ydr6ju2pbvulef7e0vzlb8i58nijkrg SF<sub>6</sub>]
* N<sub>2</sub>
* [https://caltech.box.com/s/s3oi147iafil7ruil2dwgw5kxn9je2a5 N<sub>2</sub>]
* O<sub>2</sub>
* [https://caltech.box.com/s/sar0sdkzrjyvzh63gww199558297rzaj O<sub>2</sub>]
* O<sub>3</sub>
* [https://caltech.box.com/s/f08m19vgz2sir41vzqdkql4wcpcsc7nz O<sub>3</sub>]
* NH<sub>3</sub>
* [https://caltech.box.com/s/g4r8qnbmn4gfdly1knni5rhnubpuq0zv NH<sub>3</sub>]
* H<sub>2</sub>
* [https://caltech.box.com/s/f6080rhdsuu8mblne62c02oapl7319cg H<sub>2</sub>]
* Ar
* [https://caltech.box.com/s/djtj0j1671dvo6to8x0t56g2b8ekvmrz Ar]


===== ALD Precursor List =====
===== ALD Precursor List (Links to SDS) =====
* TMA (aluminum)
* [https://caltech.box.com/s/hff83jq4x96new2sgczzvwgacy7tsl0e TMA (aluminum)]
* TDMAT (titanium)
* [https://caltech.box.com/s/pkjuqifvnzle2eanykhvhe4m8hu6qgye TDMAT (titanium)]
* BTBAS (silicon)
* [https://caltech.box.com/s/jurskhuqjxhpnmtl5iwfmgpj8d3apmy3 BTBAS (silicon)]
* TDMAH (hafnium)
* BDEAS (silicon) (SDS coming soon)
* TBTDEN (niobium)
* [https://caltech.box.com/s/6zdhb6n1yr78wgy9mtjzqkljo75vxb75 TDMAH (hafnium)]
* [https://caltech.box.com/s/pznx6n00avfmmp47h3esqkkc7hsrw04d TBTDEN (niobium)]
* Others upon request
* Others upon request


== Resources ==
== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select ALD from the dropdown menu)
===== SOPs & Troubleshooting =====
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/97mn2fyncejg6d4uo5lwtyl98w8n9gd2 General SOP]
* [https://caltech.box.com/s/97mn2fyncejg6d4uo5lwtyl98w8n9gd2 KNI ALD SOP]
* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]


===== Process Documents =====
===== Process Documents (<i>login to LabRunr required</i>)=====
* [https://labrunr.caltech.edu/machinefiles/154/Oxford%20Instruments%20ALD%20Materials%20Example%20Guide%20-%202017-10-25.pdf Oxford Instruments ALD Materials Example Guide]
* [https://labrunr.caltech.edu/machinefiles/154/Oxford%20Instruments%20ALD%20Materials%20Example%20Guide%20-%202017-10-25.pdf Oxford Instruments ALD Materials Example Guide]
* [https://labrunr.caltech.edu/machinefiles/154/OxfordInstruments%20ALD%20-%20gases%20and%20precursors.pdf Oxford Instruments ALD gases and precursors]
* [https://labrunr.caltech.edu/machinefiles/154/OxfordInstruments%20ALD%20-%20gases%20and%20precursors.pdf Oxford Instruments ALD gases and precursors]
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* [https://labrunr.caltech.edu/machinefiles/154/process%20infor%20for%20Caltech_v2.pdf Oxford Instruments ALD Process Information guidance]
* [https://labrunr.caltech.edu/machinefiles/154/process%20infor%20for%20Caltech_v2.pdf Oxford Instruments ALD Process Information guidance]
* [https://labrunr.caltech.edu/machinefiles/154/ALD%20Bias%20Control%20Oxford%20Instruments.pdf  Oxford Instruments ALD Bias Control]
* [https://labrunr.caltech.edu/machinefiles/154/ALD%20Bias%20Control%20Oxford%20Instruments.pdf  Oxford Instruments ALD Bias Control]
===== Process Resources =====
* [https://caltech.box.com/s/rw25s9zzka0adhgclxr9ppxpoyduanx7 Aluminum Nitride (AlN)]
* [https://caltech.box.com/s/o0lmo99pz3p4cjihmytmvqbvmq5pr1yg Aluminum Oxide (Al<sub>2</sub>O<sub>3</sub>)]
* [https://caltech.box.com/s/gvmfu3np83ehfwub7ebuuajyia52thv0 Hafnium Oxide (HfO<sub>2</sub>)]
* [https://caltech.box.com/s/h7x9a3i8uj55hbahpam9fzni967fjnkp Silicon Nitride (Si<sub>3</sub>N<sub>4</sub>)]
* [https://caltech.box.com/s/zaloyrsabapa5b7pvnjxglsgfjeux1zx Titanium Nitride (TiN)]
* [https://caltech.box.com/s/knpefm73sdjsnd7zmo78mr6h273eyx2n Titanium Oxide (TiO<sub>2</sub>)]


===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/kjt6yg4sv3ucc1eakzislcoidawiwcfn Oxford FlexAL ALD System manual]
* [https://labrunr.caltech.edu/machinefiles/154/FlexAL_II_IDS_EN_10.pdf Oxford FlexAL ALD System manual] (<i>login to LabRunr</i>)
* [https://caltech.box.com/s/tgypp7gvwxtk8um4pmybietd29fj7htj Adixen 4 Series Multistage Roots dry pumps brochure]
* [https://caltech.box.com/s/tgypp7gvwxtk8um4pmybietd29fj7htj Adixen 4 Series Multistage Roots dry pumps brochure]
* [https://caltech.box.com/s/eubo1b949weunxvwkti50jhi7nuh7mgb NovaSafe exhaust abatement system manual]
* [https://caltech.box.com/s/eubo1b949weunxvwkti50jhi7nuh7mgb NovaSafe exhaust abatement system manual]
* [https://caltech.box.com/s/coo3cojduk337m0o120gcur5md0k1qa7 Oxford Ozone Delivery module manual]
* [https://labrunr.caltech.edu/machinefiles/154/OzoneDel_MAN_EN_1A.PDF Oxford Ozone Delivery module manual] (<i>login to LabRunr</i>)
* [https://caltech.box.com/s/8n7k2wiwqzxlpt32uaj2rwvf7maqu9xl Oxford FlexAl system drawings]
* [https://caltech.box.com/s/8n7k2wiwqzxlpt32uaj2rwvf7maqu9xl Oxford FlexAl system drawings] (<i>login to LabRunr</i>)


== Specifications ==
== Specifications ==
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* ALD 100 mm pumping pipework plus 100 mm fast APC
* ALD 100 mm pumping pipework plus 100 mm fast APC
* Process Acceptance criteria for thermal and plasma Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
* Process Acceptance criteria for thermal and plasma Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]
===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]
===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Latest revision as of 21:02, 22 August 2023

Atomic Layer Deposition (ALD)
FlexAL-II-ALD.jpg
Instrument Type Deposition
Techniques Atomic Layer Deposition of
Oxides and Nitrides
Staff Manager Kelly McKenzie
Staff Email kmmckenz@caltech.edu
Staff Phone 626-395-5732
Reserve time on FBS
Request training via FBS User Dashboard
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model FlexAL II

Description

The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.

Some film examples by KNI lab members include thermally-grown conductive TiO2 as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al2O3 and HfO2 as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.

Applications
  • Aluminum oxide and nitride deposition
  • Silicon dioxide and nitride deposition
  • Titanium oxide and nitride deposition
  • Hafnium oxide deposition
  • Niobium oxide and nitride deposition
  • Deposition of other films can be made available upon request
Allowed material in ALD System
  • Si, SixNy, SiO2, SOI
  • Hard masks compatible with process temperature
ALD Gas List (links to SDS)
ALD Precursor List (Links to SDS)

Resources

Equipment Status
SOPs & Troubleshooting
Process Documents (login to LabRunr required)
Process Resources
Manufacturer Manuals

Specifications

System Features
  • FlexAL ALD Process Module
  • The chamber is electrically heated to 150 °C
  • Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
  • Precursor Multi-Bubbler Cabinet 6 Way
  • Standard Gas Pod externally mounted (8 lines max)
  • 4 each Standard gasline and MFC for non-toxic gases
  • 3 each By-passed gasline and MFC for toxic gases
  • Ozone delivery system for ALD with up to 22% w/w ozone concentration
  • Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
  • Chamber process pump Pfeiffer/Adixen A604H kit
  • FlexAL compact single wafer load lock kit
  • Load Lock dry pump kit
  • PC & 19" monitor
System Specifications
  • ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
  • ALD 600 °C biasable Inconel electrode
  • Heated 250 mTorr high resolution temperature compensated capacitance manometer
  • ALD 100 mm pumping pipework plus 100 mm fast APC
  • Process Acceptance criteria for thermal and plasma Al2O3 and TiO2


Related Instrumentation in the KNI

Sputtering Systems
Electron Beam Evaporation Systems
Chemical Vapor Deposition
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