XeF2 Etcher for Silicon: Difference between revisions
Jump to navigation
Jump to search
mNo edit summary |
mNo edit summary |
||
Line 5: | Line 5: | ||
|ImageTwo = | |ImageTwo = | ||
|InstrumentType = [[Equipment_List#Etching|Etching]] | |InstrumentType = [[Equipment_List#Etching|Etching]] | ||
|RoomLocation = | |RoomLocation = B235C Steele | ||
|LabPhone = 626-395-1539 | |LabPhone = 626-395-1539 | ||
|PrimaryStaff = [[Alex Wertheim]] | |PrimaryStaff = [[Alex Wertheim]] |
Revision as of 21:11, 27 May 2019
|
Description
The XeF2 etcher flows pressure- and time-controlled pulses of XeF2 gas into a chamber to deliver an isotropic etch that is highly selective only to silicon. It is commonly used to remove Si under layers that are accessed through vias, in order to suspend membranes and other structures in MEMS devices.
Applications
- Very high selectivity dry Si etching
- MEMS fabrication