Plasma-Enhanced Chemical Vapor Deposition (PECVD): Difference between revisions
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== Description == | == Description == | ||
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (-150 to 700 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions | The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (-150 to 700 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions. | ||
===== Applications ===== | ===== Applications ===== | ||
* | * Amorphous Silicon Deposition | ||
* | * Silicon Dioxide Deposition | ||
* | * Silicon Nitride Deposition | ||
===== Allowed material in PECVD System ===== | ===== Allowed material in PECVD System ===== | ||
* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI | * Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI | ||
* | * Hard masks compatible with process temperature | ||
===== PECVD Gas List ===== | ===== PECVD Gas List ===== | ||
* 80%CF<sub>4</sub>/O<sub>2</sub> | * 80%CF<sub>4</sub>/O<sub>2</sub> | ||
| Line 41: | Line 38: | ||
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | * [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP] | ||
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | * [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP] | ||
===== Process Documents ===== | ===== Process Documents ===== | ||
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards] | * [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards] | ||
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* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous silicon deposition (Silane/helium)] | * [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous silicon deposition (Silane/helium)] | ||
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | * [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes] | ||
===== Manufacturer Manuals ===== | ===== Manufacturer Manuals ===== | ||
* [https://caltech.box.com/s/elhzieiw8fjdbucugpbbk3d22t2yxnkz Oxford PECVD System Manual] | * [https://caltech.box.com/s/elhzieiw8fjdbucugpbbk3d22t2yxnkz Oxford PECVD System Manual] | ||
| Line 58: | Line 53: | ||
===== Manufacturer Specifications ===== | ===== Manufacturer Specifications ===== | ||
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet] | * [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet] | ||
===== System Features ===== | ===== System Features ===== | ||
* Universal base console | * Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump | ||
* PC 2000 Operating system | * PC 2000 Operating system | ||
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection | * PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection | ||
* Heated upper electrode to prevent condensation of low vapor pressure precursors | * Heated upper electrode to prevent condensation of low vapor pressure precursors | ||
* PECVD 205 mm electrically heated (700 deg C) lower electrode with central wafer lift mechanism | * PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism | ||
* Parameter ramping software | * Parameter ramping software | ||
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement | * 5 Torr capacitance manometer for process control, and penning for base pressure measurement | ||
* Process chamber pumping with 63 mm branch to APC, and isolation valve | * Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots | ||
* Twelve line gas pod with | * Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas | ||
* Chamber Gas ring, with split gas manifold | * Chamber Gas ring, with split gas manifold | ||
* Liquid vapor delivery system | * Liquid vapor delivery system | ||
* Single-wafer automatic insertion load lock with soft pump option | * Single-wafer automatic insertion load lock with soft pump option | ||
===== System Specifications ===== | ===== System Specifications ===== | ||
* Chamber wall heating 80 deg C | * Chamber wall heating 80 °C | ||
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit | * 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; The generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes | ||
* 600 W solid-state 50 | * 600 W solid-state 50-460 kHz LF generator | ||
Revision as of 20:35, 27 May 2019
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Description
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (-150 to 700 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
Applications
- Amorphous Silicon Deposition
- Silicon Dioxide Deposition
- Silicon Nitride Deposition
Allowed material in PECVD System
- Si, SixNy, SiO2, SOI
- Hard masks compatible with process temperature
PECVD Gas List
- 80%CF4/O2
- N2
- N2O
- NH3
- SiH4 (5% in N2 and Ar)
Resources
SOPs & Troubleshooting
Process Documents
- Process Standards
- High rate SiOx
- High rate SiNx
- Low Rate SiOx
- Low rate SiNx
- Amorphous silicon deposition (Silane/helium)
- Etch chamber cleaning recipes
Manufacturer Manuals
Specifications
Manufacturer Specifications
System Features
- Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
- PC 2000 Operating system
- PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
- Heated upper electrode to prevent condensation of low vapor pressure precursors
- PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
- Parameter ramping software
- 5 Torr capacitance manometer for process control, and penning for base pressure measurement
- Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
- Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
- Chamber Gas ring, with split gas manifold
- Liquid vapor delivery system
- Single-wafer automatic insertion load lock with soft pump option
System Specifications
- Chamber wall heating 80 °C
- 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; The generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
- 600 W solid-state 50-460 kHz LF generator