ICP-RIE: Dielectric Etcher

Dielectric Etcher Instrument Type Etching Techniques pseudoBosch Cryogenic silicon etch Staff Manager Nathan S. Lee Staff Email nathslee@caltech.edu Staff Phone 626-395-1319 Reserve time on FBS Request training via FBS User Dashboard Lab Location B235 Steele Lab Phone 626-395-1532 Manufacturer Oxford Instruments Model {{{Model}}}

Description

The Dielectric Inductively Coupled Plasma - Reactive Ion Etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C₄F₈ and SF₆ gases, and cryogenic silicon etch with SF₆ and O₂. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.

Applications

• Cryogenic etch of silicon
• pseudo-Bosch of silicon

Allowed material in Dielectric Etch System

• Si, Si_xN_y, SiO₂
• PMMA/ZEP/SPR/AZ/maN resists, SiO_x/Al₂O₃ hard masks
• No metals

Dielectric Etcher Gas List

• SF₆
• C₄F₈
• O₂
• Ar
• N₂
• CHF₃
• N₂O
• NH₃

Resources

SOPs & Troubleshooting

• SOP Type (Short Version | Long Version)
• Etcher toxic gas handling SOP
• Power Up Oxford ICP-RIE SOP
• Gas Status Board SOP
• Troubleshooting Guide

Process Documents

• Process Standards
• Silicon Waveguide Etch
• Silicon Nitride etch
• Hard Mask Oxide Etch

Video Tutorials

• Video 1 | Video 2
• Video Series: (Part 1 | Part 2 | Part 3)

Graphical Handouts

• Handout 1
• Handout 2

Presentations

• Presentation 1
• Presentation 2

Manufacturer Manuals

• Manual 1
• Manual 2

Specifications

Manufacturer Specifications

• Manufacturer Data Sheet

Mode 1 Specifications

• Voltage Range: 0.5 to 30.0 kV
• Aperture Sizes: 10 mm, 15 mm, 20 mmm, 30 mm
• etc.

Mode 2 Specifications

• Voltage Range: 5.0 to 30.0 kV
• Current Range: 10 pA - 20 nA
• etc.