XeF2 Etcher for Silicon: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
m (→Description) |
||
| Line 18: | Line 18: | ||
}} | }} | ||
== Description == | == Description == | ||
The | The XeF<sub>2</sub> etcher flows pressure and time controlled pulses of XeF<sub>2</sub> gas into a chamber to deliver an isotropic etch which is highly selective only to Silicon. It is commonly used to remove Si under layers accessed through Vias to suspend membranes and other structures in MEMS devices. | ||
===== Applications ===== | ===== Applications ===== | ||
* Very high selectivity dry Si etching | * Very high selectivity dry Si etching | ||
* MEMS fabrication | * MEMS fabrication | ||
== Resources == | == Resources == | ||
===== SOPs ===== | ===== SOPs ===== | ||
* [https://caltech.box.com/s/2zf5dwmdjyjxptvoscxkxe6yt57vr85v KNI SOP] | * [https://caltech.box.com/s/2zf5dwmdjyjxptvoscxkxe6yt57vr85v KNI SOP] | ||
Revision as of 00:54, 21 May 2019
|
Description
The XeF2 etcher flows pressure and time controlled pulses of XeF2 gas into a chamber to deliver an isotropic etch which is highly selective only to Silicon. It is commonly used to remove Si under layers accessed through Vias to suspend membranes and other structures in MEMS devices.
Applications
- Very high selectivity dry Si etching
- MEMS fabrication