View source for III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo = 
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch<br>Compound Semiconductor Etching
|EmailList =  kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF<sub>6</sub> and C<sub>4</sub>F<sub>8</sub> gases as well as cryogenic silicon etching with SF<sub>6</sub> and O<sub>2</sub> over a temperature range of -140 to 300 &deg;C. This system supports wafer sizes up to 6 inches. 
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al<sub>2</sub>O<sub>3</sub>, Cr hard masks
* Other: Metal in etch stack (not exposed to plasma)
===== Etching Gas List =====
* SF<sub>6</sub>
* C<sub>4</sub>F<sub>8</sub>
* O<sub>2</sub>
* Ar
* Cl<sub>2</sub>
* SiCl<sub>4</sub>
* CH<sub>4</sub>
* H<sub>2</sub>
* HBr

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (<i>login to LabRunr required</i>)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system 
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode 
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV  turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 &deg;C
* Cryo table range -140 to 400 &deg;C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling


== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]