The KNI Lab at Caltech - Recent changes [en]

Full Service Rates

Tkimoto — Wed, 07 Oct 2026 02:58:34 GMT

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	=== Cost ===		=== Cost ===
	The prices below are for industry customers (for-profit entities). If you are a non-Caltech academic or government customer, please contact us for the rates. Rates are effective October 1, ~~2025~~.		The prices below are for industry customers (for-profit entities). If you are a non-Caltech academic or government customer, please contact us for the rates. Rates are effective October 1, 2026.
	{\| class="wikitable"		{\| class="wikitable"
	\|'''Resource'''		\|'''Resource'''
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	\|-		\|-
	\|Technical Staff Effort		\|Technical Staff Effort
	\|$ ~~200~~.00		\|$ 170.00
	\|-		\|-
	\|EBPG 5000+ or 5200		\|EBPG 5000+ or 5200
	\|$ ~~442~~.00		\|$ 455.00
	\|-		\|-
	\|Nova 600 FIB		\|Nova 600 FIB
	\|$ ~~255~~.00		\|$ 263.00
	\|-		\|-
	\|III-V Cobra ALE Etcher		\|III-V Cobra ALE Etcher
	\|$ ~~204~~.00		\|$ 210.00
	\|-		\|-
	\|PlasmaPro PECVD (oxide, nitride)		\|PlasmaPro PECVD (oxide, nitride)
	\|$ ~~204~~.00		\|$ 210.00
	\|-		\|-
	\|FlexAL II ALD/ALE		\|FlexAL II ALD/ALE
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	\|-		\|-
	\|Legacy PlasmaLab PECVD (silicon)		\|Legacy PlasmaLab PECVD (silicon)
	\|$ ~~136~~.00		\|$ 140.00
	\|-		\|-
	\|Legacy Oxford Etchers (DRIE, III-V, Dielectric)		\|Legacy Oxford Etchers (DRIE, III-V, Dielectric)
	\|$ ~~136~~.00		\|$ 140.00
	\|-		\|-
	\|Nanoscribe PPGT (2D/3D print)		\|Nanoscribe PPGT (2D/3D print)
	\|$ 17.00		\|$ 27.00
	\|-		\|-
	\|Administrative Fee (per transaction)		\|Administrative Fee (per transaction)
	\|$ ~~340~~.00		\|$ 170.00
	\|}		\|}
	'''''Note:''' The prices shown here include Caltech's indirect cost rate.''		'''''Note:''' The prices shown here include Caltech's indirect cost rate.''

The Kavli Nanoscience Institute Laboratory at Caltech

Tkimoto — Tue, 06 Oct 2026 22:01:43 GMT

About the KNI

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	== About the KNI ==		== About the KNI ==
	The Kavli Nanoscience Institute (KNI) Laboratory, located at the California Institute of Technology, ~~spans 10,000 ft<sup>2</sup> across two facilities, primary among them the~~ 7,500 ft<sup>2</sup> controlled-environment cleanroom in the Steele Building sub-basement, where the ~~majority of~~ lithography, deposition, etching, microscopy, and supporting instrumentation is located. Managed by full-time technical staff and available for use by researchers at Caltech and other academic, government and industrial institutions, the KNI Laboratory is equipped for — and dedicated to — exploring the limits of nanofabrication.		The Kavli Nanoscience Institute (KNI) Laboratory, located at the California Institute of Technology, is a 7,500 ft<sup>2</sup> controlled-environment cleanroom in the Steele Building sub-basement, where the lithography, deposition, etching, microscopy, and supporting instrumentation is located. The majority of the cleanroom space under HEPA filter is ISO 6 (class 1,000) with photo and electron beam lithography areas under ISO 5 (class 100). Managed by full-time technical staff and available for use by researchers at Caltech and other academic, government and industrial institutions, the KNI Laboratory is equipped for — and dedicated to — exploring the limits of nanofabrication.

	== Available Resources ==		== Available Resources ==

Carbon Evaporator

Ykim3 — Sat, 03 Oct 2026 02:49:43 GMT

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	== Resources ==		== Resources ==
	===== Equipment Data =====		===== Equipment Data =====
			[[File:Carbon Thread Installation 1.jpg\|thumb\|'''Carbon Thread Installation Picture 1: Correct parallel thread installation''']]

	[[~~Image~~:Carbon~~-Evaporator-Source-~~Thread.jpg\|thumb\|~~top~~\|~~upright~~=~~0.9\|~~The Carbon Evaporator source needs to be periodically disconnected from the instrument by the user so that the carbon thread can be changed; see the SOP and notes in the SOP section on this page for instructions on how to change the thread]]		[[File:Carbon Thread Installation 2.jpg\|thumb\|'''Carbon Thread Installation Picture 2: Thread properly wound around the outer surface of the clamp'''\|alt=The Carbon Evaporator source needs to be periodically disconnected from the instrument by the user so that the carbon thread can be changed; see the SOP and notes in the SOP section on this page for instructions on how to change the thread.]]

	===== SOP & Troubleshooting =====		===== SOP & Troubleshooting =====
	* [https://caltech.app.box.com/file/2102569954808 Updated SOP (01/14/2026)]		* [https://caltech.app.box.com/file/2102569954808 Updated SOP (01/14/2026)]
	* The procedure to install a new carbon thread can be found on [https://caltech.app.box.com/file/725150718178?s=xx5psvz8u0jqszdqhh44fd5xkxmhz4a6 Manual page 47]		* The procedure to install a new carbon thread can be found on [https://caltech.app.box.com/file/725150718178?s=xx5psvz8u0jqszdqhh44fd5xkxmhz4a6 Manual page 47]
	** Note: always install as a "double thread," i.e. double the thread back over itself before installing – a thread length that is approximately twice the length of the evaporator's door width is long enough to double over and install.		* The Carbon Evaporator source needs to be periodically disconnected from the instrument by the user so that the carbon thread can be changed; see the SOP and notes in the SOP section on this page for instructions on how to change the thread.
			* Note: always install as a "double thread," i.e. double the thread back over itself before installing – a thread length that is approximately twice the length of the evaporator's door width is long enough to double over and install.

	===== Video =====		===== Video =====
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	===== Carbon Evaporation Specifications =====		===== Carbon Evaporation Specifications =====
	* Average Deposition Rate: ~1 nm per pulse, when using a double thread (i.e. a thread that is doubled over on itself; see notes in SOP section above)		* Average Deposition Rate: ~1 nm per pulse, when using a double thread (i.e. a thread that is doubled over on itself; see notes in SOP section above)
	* Monitor deposition thickness using the quartz crystal thickness monitor, or simply program the number of pulses that you want		* Monitor deposition thickness using the quartz crystal thickness monitor, or simply program the number of pulses that you want<br>
	~~<br>~~
	<br>
	== Related Instrumentation in the KNI ==		== Related Instrumentation in the KNI ==
	===== Sample Preparation for Microscopy =====		===== Sample Preparation for Microscopy =====

File:Carbon Thread Installation 2.jpg

Ykim3 — Fri, 02 Oct 2026 19:50:39 GMT

Ykim3 uploaded File:Carbon Thread Installation 2.jpg

New page

File:Carbon Thread Installation 1.jpg

Ykim3 — Fri, 02 Oct 2026 19:49:08 GMT

Ykim3 uploaded File:Carbon Thread Installation 1.jpg

New page

Carbon Thread Installation 1

III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

Kmmckenz — Thu, 01 Oct 2026 00:21:07 GMT

Created page with "{{InstrumentInfoboxOneImage| |InstrumentName = III-V, Metal & Si Etcher |HeaderColor = #FFE2B9 |ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg |ImageTwo = |InstrumentType = Etching |RoomLocation = B235 Steele |LabPhone = 626-395-1532 |PrimaryStaff = Kelly McKenzie |StaffEmail = kmmckenz@caltech.edu |StaffPhone = 626-395-5732 |Manufacturer = Oxford Instruments |Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching |E..."

New page

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Etch materials: Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Other: Metal in etch stack (not exposed to plasma)
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]